DIODES-FET, MOSFET Arrays-DMC2710UVT-13

Description

Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;20V/Type;N-Channel + P-Channel/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;800mW/Gate Threshold Voltage (Vgs(th));1V/Reverse Transfer Capacitance (Crss@Vds);6.5pF/Output Capacitance(Coss);13pF


20V 800mW 1V 1 N-Channel + 1 P-Channel TSOT-23-6 FET, MOSFET Arrays RoHS

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Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;20V/Type;N-Channel + P-Channel/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;800mW/Gate Threshold Voltage (Vgs(th));1V/Reverse Transfer Capacitance (Crss@Vds);6.5pF/Output... Read more

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    Description

    Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;20V/Type;N-Channel + P-Channel/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;800mW/Gate Threshold Voltage (Vgs(th));1V/Reverse Transfer Capacitance (Crss@Vds);6.5pF/Output Capacitance(Coss);13pF


    20V 800mW 1V 1 N-Channel + 1 P-Channel TSOT-23-6 FET, MOSFET Arrays RoHS

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