DIODES-FET, MOSFET Arrays-DMC3016LSD-13

Description

Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);8.2A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.6W/Gate Threshold Voltage (Vgs(th));3V/Reverse Transfer Capacitance (Crss@Vds);110pF/Output Capacitance(Coss);147pF


30V 8.2A 1.6W 3V 1 N-Channel + 1 P-Channel SO-8 FET, MOSFET Arrays RoHS

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Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);8.2A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.6W/Gate Threshold Voltage (Vgs(th));3V/Reverse... Read more

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    Description

    Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);8.2A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.6W/Gate Threshold Voltage (Vgs(th));3V/Reverse Transfer Capacitance (Crss@Vds);110pF/Output Capacitance(Coss);147pF


    30V 8.2A 1.6W 3V 1 N-Channel + 1 P-Channel SO-8 FET, MOSFET Arrays RoHS

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