DIODES-FET, MOSFET Arrays-DMC67D8UFDB-7

Description

/Drain to Source Voltage;60V/Type;N-Channel + P-Channel/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;890mW/Gate Threshold Voltage (Vgs(th));2.5V/Reverse Transfer Capacitance (Crss@Vds);101pF/Output Capacitance(Coss);128pF


60V 890mW 2.5V FET, MOSFET Arrays RoHS

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/Drain to Source Voltage;60V/Type;N-Channel + P-Channel/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;890mW/Gate Threshold Voltage (Vgs(th));2.5V/Reverse Transfer Capacitance (Crss@Vds);101pF/Output Capacitance(Coss);128pF60V 890mW 2.5V FET,... Read more

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    Description

    /Drain to Source Voltage;60V/Type;N-Channel + P-Channel/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;890mW/Gate Threshold Voltage (Vgs(th));2.5V/Reverse Transfer Capacitance (Crss@Vds);101pF/Output Capacitance(Coss);128pF


    60V 890mW 2.5V FET, MOSFET Arrays RoHS

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