DIODES-FET, MOSFET Arrays-DMG6602SVT-7

Description

Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);3.4A;2.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.27W/Gate Threshold Voltage (Vgs(th));2.3V/Reverse Transfer Capacitance (Crss@Vds);40pF;45pF/Output Capacitance(Coss);40pF;50pF


N-Channel+P-Channel Array 30V Surface Mount TSOT-26

Product form

Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);3.4A;2.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.27W/Gate Threshold Voltage (Vgs(th));2.3V/Reverse... Read more

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    Description

    Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);3.4A;2.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.27W/Gate Threshold Voltage (Vgs(th));2.3V/Reverse Transfer Capacitance (Crss@Vds);40pF;45pF/Output Capacitance(Coss);40pF;50pF


    N-Channel+P-Channel Array 30V Surface Mount TSOT-26

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