DIODES-FET, MOSFET Arrays-DMG6602SVTQ-7

Description

Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);3.4A;2.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;840mW;1.27W/Gate Threshold Voltage (Vgs(th));1.9V;1V


N-Channel+P-Channel 30V 3.4A 840mW Surface Mount TSOT-23-6

Product form

Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);3.4A;2.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;840mW;1.27W/Gate Threshold Voltage (Vgs(th));1.9V;1VN-Channel+P-Channel... Read more

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    Description

    Number;1 N-Channel + 1 P-Channel/Drain to Source Voltage;30V/Type;N-Channel + P-Channel/Current - Continuous Drain(Id);3.4A;2.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;840mW;1.27W/Gate Threshold Voltage (Vgs(th));1.9V;1V


    N-Channel+P-Channel 30V 3.4A 840mW Surface Mount TSOT-23-6

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