DIODES-FET, MOSFET Arrays-DMN2029USD-13

Description

Number;2 N-Channel/Drain to Source Voltage;20V/Current - Continuous Drain(Id);5.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.2W/Gate Threshold Voltage (Vgs(th));1.5V/Reverse Transfer Capacitance (Crss@Vds);110pF


20V 5.8A 1.2W 1.5V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS

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Number;2 N-Channel/Drain to Source Voltage;20V/Current - Continuous Drain(Id);5.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.2W/Gate Threshold Voltage (Vgs(th));1.5V/Reverse Transfer Capacitance (Crss@Vds);110pF20V 5.8A 1.2W... Read more

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    Description

    Number;2 N-Channel/Drain to Source Voltage;20V/Current - Continuous Drain(Id);5.8A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;1.2W/Gate Threshold Voltage (Vgs(th));1.5V/Reverse Transfer Capacitance (Crss@Vds);110pF


    20V 5.8A 1.2W 1.5V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS

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