DIODES-FET, MOSFET Arrays-DMN3060LVT-13

Description

Number;2 N-Channel/Drain to Source Voltage;30V/Current - Continuous Drain(Id);3.6A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;830mW/Gate Threshold Voltage (Vgs(th));1.8V


30V 3.6A 830mW 1.8V 2 N-Channel TSOT-23-6 FET, MOSFET Arrays RoHS

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Number;2 N-Channel/Drain to Source Voltage;30V/Current - Continuous Drain(Id);3.6A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;830mW/Gate Threshold Voltage (Vgs(th));1.8V30V 3.6A 830mW 1.8V 2 N-Channel... Read more

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    Description

    Number;2 N-Channel/Drain to Source Voltage;30V/Current - Continuous Drain(Id);3.6A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;830mW/Gate Threshold Voltage (Vgs(th));1.8V


    30V 3.6A 830mW 1.8V 2 N-Channel TSOT-23-6 FET, MOSFET Arrays RoHS

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