DIODES-FET, MOSFET Arrays-DMN32D0LVQ-7

Description

/Drain to Source Voltage;30V/Type;N-Channel/Current - Continuous Drain(Id);680mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;480mW/Gate Threshold Voltage (Vgs(th));1.2V


30V 680mA 480mW 1.2V SOT-563 FET, MOSFET Arrays RoHS

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/Drain to Source Voltage;30V/Type;N-Channel/Current - Continuous Drain(Id);680mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;480mW/Gate Threshold Voltage (Vgs(th));1.2V30V 680mA 480mW 1.2V SOT-563 FET, MOSFET... Read more

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    Description

    /Drain to Source Voltage;30V/Type;N-Channel/Current - Continuous Drain(Id);680mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;480mW/Gate Threshold Voltage (Vgs(th));1.2V


    30V 680mA 480mW 1.2V SOT-563 FET, MOSFET Arrays RoHS

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