DIODES-FET, MOSFET Arrays-DMN33D9LV-13

Description

Number;2 N-Channel/Drain to Source Voltage;30V/Type;N-Channel/Current - Continuous Drain(Id);350mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;430mW/Gate Threshold Voltage (Vgs(th));1.5V


30V 350mA 430mW 1.5V 2 N-Channel SOT-563 FET, MOSFET Arrays RoHS

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Number;2 N-Channel/Drain to Source Voltage;30V/Type;N-Channel/Current - Continuous Drain(Id);350mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;430mW/Gate Threshold Voltage (Vgs(th));1.5V30V 350mA 430mW 1.5V 2 N-Channel... Read more

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    Description

    Number;2 N-Channel/Drain to Source Voltage;30V/Type;N-Channel/Current - Continuous Drain(Id);350mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;430mW/Gate Threshold Voltage (Vgs(th));1.5V


    30V 350mA 430mW 1.5V 2 N-Channel SOT-563 FET, MOSFET Arrays RoHS

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