DIODES-FET, MOSFET Arrays-DMN3401LVQ-7

Description

/Drain to Source Voltage;30V/Current - Continuous Drain(Id);1.1A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;810mW/Gate Threshold Voltage (Vgs(th));1.6V


30V 1.1A 810mW 1.6V SOT-563 FET, MOSFET Arrays RoHS

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/Drain to Source Voltage;30V/Current - Continuous Drain(Id);1.1A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;810mW/Gate Threshold Voltage (Vgs(th));1.6V30V 1.1A 810mW 1.6V SOT-563 FET, MOSFET... Read more

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    Description

    /Drain to Source Voltage;30V/Current - Continuous Drain(Id);1.1A/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;810mW/Gate Threshold Voltage (Vgs(th));1.6V


    30V 1.1A 810mW 1.6V SOT-563 FET, MOSFET Arrays RoHS

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