DIODES-FET, MOSFET Arrays-DMN63D1LDW-7

Description

Number;2 N-Channel/Drain to Source Voltage;60V/Type;N-Channel/Current - Continuous Drain(Id);250mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;390mW/Gate Threshold Voltage (Vgs(th));2.5V


60V 250mA 390mW 2.5V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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Number;2 N-Channel/Drain to Source Voltage;60V/Type;N-Channel/Current - Continuous Drain(Id);250mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;390mW/Gate Threshold Voltage (Vgs(th));2.5V60V 250mA 390mW 2.5V 2 N-Channel... Read more

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    Description

    Number;2 N-Channel/Drain to Source Voltage;60V/Type;N-Channel/Current - Continuous Drain(Id);250mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;390mW/Gate Threshold Voltage (Vgs(th));2.5V


    60V 250mA 390mW 2.5V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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