DIODES-FET, MOSFET Arrays-DMN65D8LDWQ-13

Description

Number;2 N-Channel/Drain to Source Voltage;60V/Type;N-Channel/Current - Continuous Drain(Id);200mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;400mW/Gate Threshold Voltage (Vgs(th));2V


60V 200mA 400mW 2V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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Number;2 N-Channel/Drain to Source Voltage;60V/Type;N-Channel/Current - Continuous Drain(Id);200mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;400mW/Gate Threshold Voltage (Vgs(th));2V60V 200mA 400mW 2V 2 N-Channel... Read more

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    Description

    Number;2 N-Channel/Drain to Source Voltage;60V/Type;N-Channel/Current - Continuous Drain(Id);200mA/Operating Temperature;-55℃~+150℃/Pd - Power Dissipation;400mW/Gate Threshold Voltage (Vgs(th));2V


    60V 200mA 400mW 2V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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