DIODES-Gate Drivers-DGD2181MS8-13

Description

Load Type;MOSFET;IGBT/Driven Configuration;Half-Bridge/High Level Delay Time;220ns/Low Level Delay Time;180ns/Operating Temperature;-40℃~+125℃/Fall Time;20ns/Rise Time;40ns/Current - Output High(IOH);1.9A/Voltage - Supply;10V~20V/Current - Output Low(IOL);2.3A/Features;Under Voltage Protection/Quiescent Current;120uA


1.9A 10V~20V 2.3A SO-8 Gate Drivers RoHS

Product form

Load Type;MOSFET;IGBT/Driven Configuration;Half-Bridge/High Level Delay Time;220ns/Low Level Delay Time;180ns/Operating Temperature;-40℃~+125℃/Fall Time;20ns/Rise Time;40ns/Current - Output High(IOH);1.9A/Voltage - Supply;10V~20V/Current - Output Low(IOL);2.3A/Features;Under... Read more

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    Description

    Load Type;MOSFET;IGBT/Driven Configuration;Half-Bridge/High Level Delay Time;220ns/Low Level Delay Time;180ns/Operating Temperature;-40℃~+125℃/Fall Time;20ns/Rise Time;40ns/Current - Output High(IOH);1.9A/Voltage - Supply;10V~20V/Current - Output Low(IOL);2.3A/Features;Under Voltage Protection/Quiescent Current;120uA


    1.9A 10V~20V 2.3A SO-8 Gate Drivers RoHS

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