DIODES-Single Bipolar Transistors-DXT2010P5-13

Description

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;60V/Current - Collector(Ic);6A/Pd - Power Dissipation;3.2W/Operating Temperature;-55℃~+150℃/DC Current Gain;55/Transition frequency(fT);130MHz/Current - Collector Cutoff;20nA/Vce Saturation(VCE(sat));210mV/Emitter-Base Voltage(Vebo);7V


Bipolar (BJT) Transistor NPN 60V 6A 130MHz 3.2W Surface Mount PowerDI-5

Product form

type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;60V/Current - Collector(Ic);6A/Pd - Power Dissipation;3.2W/Operating Temperature;-55℃~+150℃/DC Current Gain;55/Transition frequency(fT);130MHz/Current - Collector Cutoff;20nA/Vce Saturation(VCE(sat));210mV/Emitter-Base Voltage(Vebo);7VBipolar... Read more

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    Description

    type;NPN/Number;1 NPN/Collector - Emitter Voltage VCEO;60V/Current - Collector(Ic);6A/Pd - Power Dissipation;3.2W/Operating Temperature;-55℃~+150℃/DC Current Gain;55/Transition frequency(fT);130MHz/Current - Collector Cutoff;20nA/Vce Saturation(VCE(sat));210mV/Emitter-Base Voltage(Vebo);7V


    Bipolar (BJT) Transistor NPN 60V 6A 130MHz 3.2W Surface Mount PowerDI-5

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