DIODES-Single Bipolar Transistors-DXT2013P5-13

Description

type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);5A/Pd - Power Dissipation;3.2W/Operating Temperature;-55℃~+150℃/DC Current Gain;25/Transition frequency(fT);125MHz/Current - Collector Cutoff;500nA/Vce Saturation(VCE(sat));120mV/Emitter-Base Voltage(Vebo);7V


Bipolar (BJT) Transistor PNP 100V 5A 125MHz 3.2W PowerDI-5

Product form

type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);5A/Pd - Power Dissipation;3.2W/Operating Temperature;-55℃~+150℃/DC Current Gain;25/Transition frequency(fT);125MHz/Current - Collector Cutoff;500nA/Vce Saturation(VCE(sat));120mV/Emitter-Base Voltage(Vebo);7VBipolar... Read more

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    Description

    type;PNP/Number;1 PNP/Collector - Emitter Voltage VCEO;100V/Current - Collector(Ic);5A/Pd - Power Dissipation;3.2W/Operating Temperature;-55℃~+150℃/DC Current Gain;25/Transition frequency(fT);125MHz/Current - Collector Cutoff;500nA/Vce Saturation(VCE(sat));120mV/Emitter-Base Voltage(Vebo);7V


    Bipolar (BJT) Transistor PNP 100V 5A 125MHz 3.2W PowerDI-5

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