DIODES-Single FETs, MOSFETs-DMG3415U-7

Description

Drain to Source Voltage;20V/Gate Charge(Qg);9.1nC/Number;1 P-Channel/Pd - Power Dissipation;900mW/RDS(on);42.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;294pF


P-Channel 20V 4A 0.9W Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);9.1nC/Number;1 P-Channel/Pd - Power Dissipation;900mW/RDS(on);42.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);9.1nC/Number;1 P-Channel/Pd - Power Dissipation;900mW/RDS(on);42.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;294pF


    P-Channel 20V 4A 0.9W Surface Mount SOT-23

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