DIODES-Single FETs, MOSFETs-DMN10H170SFDE-7

Description

Drain to Source Voltage;100V/Gate Charge(Qg);4.9nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;660mW/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.167nF


N-Channel 100V 2.9A 0.66W Surface Mount UDFN2020-6

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Drain to Source Voltage;100V/Gate Charge(Qg);4.9nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;660mW/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);4.9nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;660mW/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.167nF


    N-Channel 100V 2.9A 0.66W Surface Mount UDFN2020-6

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