DIODES-Single FETs, MOSFETs-DMN2055U-13

Description

Drain to Source Voltage;20V/Gate Charge(Qg);4.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;800mW/RDS(on);45mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);4.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;400pF


N-Channel 20V 4.8A 0.8W Surface Mount SOT-23-3

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Drain to Source Voltage;20V/Gate Charge(Qg);4.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;800mW/RDS(on);45mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);4.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);4.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;800mW/RDS(on);45mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);4.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;400pF


    N-Channel 20V 4.8A 0.8W Surface Mount SOT-23-3

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