DIODES-Single FETs, MOSFETs-DMN2990UFZ-7B

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;320mW/RDS(on);2.4Ω@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.6pF/Current - Continuous Drain(Id);250mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;55.2pF/Output Capacitance(Coss);8pF


20V 2.4Ω@1.5V 1 N-channel 320mW X2-DFN0606-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;320mW/RDS(on);2.4Ω@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.6pF/Current - Continuous Drain(Id);250mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;320mW/RDS(on);2.4Ω@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.6pF/Current - Continuous Drain(Id);250mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;55.2pF/Output Capacitance(Coss);8pF


    20V 2.4Ω@1.5V 1 N-channel 320mW X2-DFN0606-3 Single FETs, MOSFETs RoHS

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