DIODES-Single FETs, MOSFETs-DMN32D0LFB4-7B

Description

Drain to Source Voltage;30V/Gate Charge(Qg);600pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);1.2Ω@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);440mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;44.8pF


30V 1.2Ω@4V 1 N-channel 350mW X2-DFN1006-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);600pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);1.2Ω@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);440mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);600pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);1.2Ω@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);440mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;44.8pF


    30V 1.2Ω@4V 1 N-channel 350mW X2-DFN1006-3 Single FETs, MOSFETs RoHS

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