DIODES-Single FETs, MOSFETs-DMN3731UFB4-7B

Description

Drain to Source Voltage;30V/Gate Charge(Qg);5.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;580mW/RDS(on);730mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;7.2pF


N-Channel 30V 0.9A 0.58W Surface Mount X2-DFN1006-3

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);5.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;580mW/RDS(on);730mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);5.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;580mW/RDS(on);730mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;7.2pF


    N-Channel 30V 0.9A 0.58W Surface Mount X2-DFN1006-3

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