DIODES-Single FETs, MOSFETs-DMN55D0UT-7

Description

Drain to Source Voltage;50V/Gate Charge(Qg);636pC@8V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);4Ω@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.1pF/Current - Continuous Drain(Id);160mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;25pF


N-Channel 50V 160mA 200mW Surface Mount SOT-523

Product form

Drain to Source Voltage;50V/Gate Charge(Qg);636pC@8V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);4Ω@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.1pF/Current - Continuous Drain(Id);160mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;50V/Gate Charge(Qg);636pC@8V/Number;1 N-channel/Pd - Power Dissipation;200mW/RDS(on);4Ω@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.1pF/Current - Continuous Drain(Id);160mA/Gate Threshold Voltage (Vgs(th));800mV/Ciss-Input Capacitance;25pF


    N-Channel 50V 160mA 200mW Surface Mount SOT-523

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