DIODES-Single FETs, MOSFETs-DMN60H080DS-13

Description

Drain to Source Voltage;600V/Gate Charge(Qg);1.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);67Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);70mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;25pF


N-Channel 600V 70mA 0.7W Surface Mount SOT-23

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);1.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);67Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);70mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);1.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);67Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);70mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;25pF


    N-Channel 600V 70mA 0.7W Surface Mount SOT-23

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