DIODES-Single FETs, MOSFETs-DMN62D0UWQ-13

Description

Drain to Source Voltage;60V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;320mW/RDS(on);2.5Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.4pF/Current - Continuous Drain(Id);340mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;32pF


N-Channel 60V 340mA 320mW Surface Mount SOT-323

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Drain to Source Voltage;60V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;320mW/RDS(on);2.5Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.4pF/Current - Continuous Drain(Id);340mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;320mW/RDS(on);2.5Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.4pF/Current - Continuous Drain(Id);340mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;32pF


    N-Channel 60V 340mA 320mW Surface Mount SOT-323

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