DIODES-Single FETs, MOSFETs-DMN65D8L-7

Description

Drain to Source Voltage;60V/Gate Charge(Qg);870pC@10V/Number;1 N-channel/Pd - Power Dissipation;540mW/RDS(on);4Ω@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);310mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;22pF


N-Channel 60V 310mA 540mW Surface Mount SOT-23

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Drain to Source Voltage;60V/Gate Charge(Qg);870pC@10V/Number;1 N-channel/Pd - Power Dissipation;540mW/RDS(on);4Ω@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);310mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);870pC@10V/Number;1 N-channel/Pd - Power Dissipation;540mW/RDS(on);4Ω@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2pF/Current - Continuous Drain(Id);310mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;22pF


    N-Channel 60V 310mA 540mW Surface Mount SOT-23

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