DIODES-Single FETs, MOSFETs-DMN65D8LT-7

Description

Drain to Source Voltage;60V/Gate Charge(Qg);400pC@10V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);2.2Ω@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.8pF/Current - Continuous Drain(Id);210mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;24pF


60V 2.2Ω@5V 1 N-channel 300mW SOT-523 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);400pC@10V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);2.2Ω@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.8pF/Current - Continuous Drain(Id);210mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);400pC@10V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);2.2Ω@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.8pF/Current - Continuous Drain(Id);210mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;24pF


    60V 2.2Ω@5V 1 N-channel 300mW SOT-523 Single FETs, MOSFETs RoHS

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