DIODES-Single FETs, MOSFETs-DMT10H009SPS-13

Description

Drain to Source Voltage;100V/Gate Charge(Qg);30nC/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.085nF


N-Channel 100V 80A 83W Surface Mount PowerDI5060-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);30nC/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);30nC/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.085nF


    N-Channel 100V 80A 83W Surface Mount PowerDI5060-8

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