DIODES-Single FETs, MOSFETs-DMT10H010LSS-13

Description

Drain to Source Voltage;100V/Gate Charge(Qg);58.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);9.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);44pF/Current - Continuous Drain(Id);29.5A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;4.166nF


N-Channel 100V 29.5A 1.9W Surface Mount SO-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);58.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);9.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);44pF/Current - Continuous Drain(Id);29.5A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input... Read more

$2.82 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);58.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);9.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);44pF/Current - Continuous Drain(Id);29.5A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;4.166nF


    N-Channel 100V 29.5A 1.9W Surface Mount SO-8

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account