DIODES-Single FETs, MOSFETs-DMT10H015LSS-13

Description

Drain to Source Voltage;100V/Gate Charge(Qg);33.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.67W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);8.3A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;1.871nF/Output Capacitance(Coss);261pF


N-Channel 100V 8.3A 1.67W Surface Mount SO-8

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);33.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.67W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);8.3A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);33.3nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.67W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);8.3A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;1.871nF/Output Capacitance(Coss);261pF


    N-Channel 100V 8.3A 1.67W Surface Mount SO-8

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