DIODES-Single FETs, MOSFETs-DMT10H015SK3-13

Description

Drain to Source Voltage;100V/Gate Charge(Qg);30.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.8W;4.2W/RDS(on);14mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);54A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.343nF


100V 14mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);30.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.8W;4.2W/RDS(on);14mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);54A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$6.30 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);30.1nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.8W;4.2W/RDS(on);14mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);54A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.343nF


    100V 14mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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