DIODES-Single FETs, MOSFETs-DMT10H025SSS-13

Description

Drain to Source Voltage;100V/Gate Charge(Qg);21.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20.4pF/Current - Continuous Drain(Id);7.4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.544nF


100V 23mΩ@10V 1 N-channel 1.9W SOP-8-150mil Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);21.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20.4pF/Current - Continuous Drain(Id);7.4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$1.77 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);21.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.9W/RDS(on);23mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20.4pF/Current - Continuous Drain(Id);7.4A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.544nF


    100V 23mΩ@10V 1 N-channel 1.9W SOP-8-150mil Single FETs, MOSFETs RoHS

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