DIODES-Single FETs, MOSFETs-DMT10H032LFDF-7

Description

Drain to Source Voltage;100V/Gate Charge(Qg);6.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.3W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;683pF


N-Channel 100V 6A 1.3W Surface Mount UDFN2020-6

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);6.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.3W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;683pFN-Channel 100V 6A... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);6.3nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.3W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;683pF


    N-Channel 100V 6A 1.3W Surface Mount UDFN2020-6

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