DIODES-Single FETs, MOSFETs-DMT36M1LPS-13

Description

Drain to Source Voltage;30V/Gate Charge(Qg);16.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);72pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.155nF/Output Capacitance(Coss);456pF


N-Channel 30V 65A 42W Surface Mount PowerDI5060-8

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Drain to Source Voltage;30V/Gate Charge(Qg);16.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);72pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);16.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);4.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);72pF/Current - Continuous Drain(Id);65A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.155nF/Output Capacitance(Coss);456pF


    N-Channel 30V 65A 42W Surface Mount PowerDI5060-8

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