DIODES-Single FETs, MOSFETs-DMT6004SCT

Description

Drain to Source Voltage;60V/Gate Charge(Qg);95.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;113W/RDS(on);3.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);105pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.556nF/Output Capacitance(Coss);1.383nF


N-Channel 60V 100A 113W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);95.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;113W/RDS(on);3.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);105pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);95.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;113W/RDS(on);3.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);105pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.556nF/Output Capacitance(Coss);1.383nF


    N-Channel 60V 100A 113W Through Hole TO-220

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