DIODES-Single FETs, MOSFETs-DMT6010LFG-7

Description

Drain to Source Voltage;60V/Gate Charge(Qg);41.3nC/Number;1 N-channel/Pd - Power Dissipation;2.2W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38.5pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.09nF


N-Channel 60V 2.2W Surface Mount PowerDI3333-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);41.3nC/Number;1 N-channel/Pd - Power Dissipation;2.2W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38.5pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);41.3nC/Number;1 N-channel/Pd - Power Dissipation;2.2W/RDS(on);7.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);38.5pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.09nF


    N-Channel 60V 2.2W Surface Mount PowerDI3333-8

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