DIODES-Single FETs, MOSFETs-DMT6016LSS-13

Description

Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.1W/RDS(on);28mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);27pF/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;864pF/Output Capacitance(Coss);282pF


N-Channel 60V 9.2A 2.1W Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.1W/RDS(on);28mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);27pF/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;864pF/Output Capacitance(Coss);282pFN-Channel... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.1W/RDS(on);28mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);27pF/Current - Continuous Drain(Id);9.2A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;864pF/Output Capacitance(Coss);282pF


    N-Channel 60V 9.2A 2.1W Surface Mount SO-8

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