DIODES-Single FETs, MOSFETs-DMT68M8LSS-13

Description

Drain to Source Voltage;60V/Gate Charge(Qg);15.6nC/Number;1 N-channel/Pd - Power Dissipation;1.3W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);12.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.107nF


N-Channel 60V 12.1A 1.3W Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);15.6nC/Number;1 N-channel/Pd - Power Dissipation;1.3W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);12.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);15.6nC/Number;1 N-channel/Pd - Power Dissipation;1.3W/RDS(on);12mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);12.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.107nF


    N-Channel 60V 12.1A 1.3W Surface Mount SO-8

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