DIODES-Single FETs, MOSFETs-DMTH10H032LFVW-13

Description

Drain to Source Voltage;100V/Gate Charge(Qg);11.9nC@10V/Type;N-Channel/Pd - Power Dissipation;3.8W/RDS(on);50mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2.5V


100V 50mΩ@4.5V 3.8W PowerDI3333-8 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);11.9nC@10V/Type;N-Channel/Pd - Power Dissipation;3.8W/RDS(on);50mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2.5V100V 50mΩ@4.5V 3.8W PowerDI3333-8 Single... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);11.9nC@10V/Type;N-Channel/Pd - Power Dissipation;3.8W/RDS(on);50mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);26A/Gate Threshold Voltage (Vgs(th));2.5V


    100V 50mΩ@4.5V 3.8W PowerDI3333-8 Single FETs, MOSFETs RoHS

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