DIODES-Single FETs, MOSFETs-DMTH10H4M5LPSWQ-13

Description

Drain to Source Voltage;100V/Gate Charge(Qg);80nC@10V/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);107A/Gate Threshold Voltage (Vgs(th));2.5V


100V 4.9mΩ@10V 136W PowerDI5060-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);80nC@10V/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);107A/Gate Threshold Voltage (Vgs(th));2.5V100V 4.9mΩ@10V 136W PowerDI5060-8 Single... Read more

$16.65 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);80nC@10V/Type;N-Channel/Pd - Power Dissipation;136W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);107A/Gate Threshold Voltage (Vgs(th));2.5V


    100V 4.9mΩ@10V 136W PowerDI5060-8 Single FETs, MOSFETs RoHS

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