DIODES-Single FETs, MOSFETs-DMTH10H4M6SPS-13

Description

Drain to Source Voltage;100V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.7W;136W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);118.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.327nF


N-Channel 100V 2.7W 136W Surface Mount PowerDI5060-8

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Drain to Source Voltage;100V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.7W;136W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);118.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);66nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.7W;136W/RDS(on);4.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);39pF/Current - Continuous Drain(Id);118.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.327nF


    N-Channel 100V 2.7W 136W Surface Mount PowerDI5060-8

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