DIODES-Single FETs, MOSFETs-DMTH6004SK3-13

Description

Drain to Source Voltage;60V/Gate Charge(Qg);95.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.9W;180W/RDS(on);3.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.556nF


N-Channel 60V 100A 3.9W 180W Surface Mount TO-252(DPAK)

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);95.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.9W;180W/RDS(on);3.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.556nFN-Channel 60V 100A... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);95.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.9W;180W/RDS(on);3.8mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4.556nF


    N-Channel 60V 100A 3.9W 180W Surface Mount TO-252(DPAK)

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