DIODES-Single FETs, MOSFETs-DMTH61M8SPSQ-13

Description

Drain to Source Voltage;60V/Gate Charge(Qg);130.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.2W;167W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);215A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.306nF


60V 1.6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);130.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.2W;167W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);215A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.306nF60V 1.6mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);130.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.2W;167W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);215A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;8.306nF


    60V 1.6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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