DIODES-Single FETs, MOSFETs-ZVN2106A

Description

Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;75pF


60V 2Ω@10V 1 N-channel 700mW TO-92-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;75pF60V... Read more

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    Description

    Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);450mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;75pF


    60V 2Ω@10V 1 N-channel 700mW TO-92-3 Single FETs, MOSFETs RoHS

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