DIODES-Single FETs, MOSFETs-ZVN2110ASTZ

Description

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);320mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;75pF


N-Channel 100V 320mA 700mW Through Hole TO-92

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);320mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;75pFN-Channel... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;700mW/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Current - Continuous Drain(Id);320mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;75pF


    N-Channel 100V 320mA 700mW Through Hole TO-92

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