DIODES-Single FETs, MOSFETs-ZVN4306AV

Description

Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;850mW/RDS(on);330mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;350pF


N-Channel 60V 1.1A 850mW Through Hole TO-92-3

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Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;850mW/RDS(on);330mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;350pFN-Channel... Read more

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    Description

    Drain to Source Voltage;60V/Number;1 N-channel/Pd - Power Dissipation;850mW/RDS(on);330mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);1.1A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;350pF


    N-Channel 60V 1.1A 850mW Through Hole TO-92-3

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