DIODES-Single FETs, MOSFETs-ZVN4525E6TA

Description

Drain to Source Voltage;250V/Gate Charge(Qg);2.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);5.6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.6pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;72pF/Output Capacitance(Coss);11pF


N-Channel 250V 230mA 1.1W Surface Mount SOT-26

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);2.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);5.6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.6pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);2.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.1W/RDS(on);5.6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.6pF/Current - Continuous Drain(Id);230mA/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;72pF/Output Capacitance(Coss);11pF


    N-Channel 250V 230mA 1.1W Surface Mount SOT-26

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