DIODES-Single FETs, MOSFETs-ZVP4525E6TA

Description

Drain to Source Voltage;250V/Gate Charge(Qg);2.45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);14Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.91pF/Current - Continuous Drain(Id);197mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;73pF/Output Capacitance(Coss);12.8pF


P-Channel 250V 197mA 1.1W Surface Mount SOT-26

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);2.45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);14Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.91pF/Current - Continuous Drain(Id);197mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);2.45nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.1W/RDS(on);14Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.91pF/Current - Continuous Drain(Id);197mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;73pF/Output Capacitance(Coss);12.8pF


    P-Channel 250V 197mA 1.1W Surface Mount SOT-26

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