DIODES-Single FETs, MOSFETs-ZXM62P03E6TA

Description

Drain to Source Voltage;30V/Gate Charge(Qg);10.2nC/Number;1 P-Channel/Pd - Power Dissipation;625mW/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;330pF


P-Channel 30V 1.5A 625mW Surface Mount SOT-26

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);10.2nC/Number;1 P-Channel/Pd - Power Dissipation;625mW/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);10.2nC/Number;1 P-Channel/Pd - Power Dissipation;625mW/RDS(on);150mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;330pF


    P-Channel 30V 1.5A 625mW Surface Mount SOT-26

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