DIODES-Single FETs, MOSFETs-ZXMN2A01E6TA

Description

Drain to Source Voltage;20V/Gate Charge(Qg);3nC/Number;1 N-channel/Pd - Power Dissipation;1.1W/RDS(on);120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;303pF


N-Channel 20V 3.1A 1.1W Surface Mount SOT-26

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);3nC/Number;1 N-channel/Pd - Power Dissipation;1.1W/RDS(on);120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);3nC/Number;1 N-channel/Pd - Power Dissipation;1.1W/RDS(on);120mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);3.1A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;303pF


    N-Channel 20V 3.1A 1.1W Surface Mount SOT-26

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