DIODES-Single FETs, MOSFETs-ZXMN6A11DN8TA

Description

Drain to Source Voltage;60V/Gate Charge(Qg);5.7nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);120mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17.1pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;330pF/Output Capacitance(Coss);35.2pF


N-Channel Array 60V 3.2A 1.25W Surface Mount SO-8

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);5.7nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);120mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17.1pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);5.7nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);120mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);17.1pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;330pF/Output Capacitance(Coss);35.2pF


    N-Channel Array 60V 3.2A 1.25W Surface Mount SO-8

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